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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical Two-Tone Performance at 945 MHz, 26 Volts Output Power -- 30 Watts PEP Power Gain -- 19 dB Efficiency -- 41.5% IMD -- -32.5 dBc * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRF9030R1 MRF9030SR1
945 MHz, 30 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
CASE 360B-05, STYLE 1 NI-360 MRF9030R1
CASE 360C-05, STYLE 1 NI-360S MRF9030SR1
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature MRF9030R1 MRF9030SR1 Symbol VDSS VGS PD PD Tstg TJ Value 68 -0.5, +15 92 0.53 117 0.67 -65 to +200 200 Unit Vdc Vdc Watts W/C Watts W/C C C
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case MRF9030R1 MRF9030SR1 Symbol RJC Max 1.9 1.5 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 2
MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA
MRF9030R1 MRF9030SR1 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.7 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 49.5 26.5 1 -- -- -- pF pF pF (continued) VGS(th) VGS(Q) VDS(on) gfs 2 -- -- -- 2.9 3.8 0.19 3 4 -- 0.4 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
MRF9030R1 MRF9030SR1 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps 18 19 -- dB Symbol Min Typ Max Unit
37
41.5
--
%
IMD
--
-32.5
-28
dBc
IRL
--
-15.5
-9
dB
Gps
--
19
--
dB
--
41.5
--
%
IMD
--
-33
--
dBc
IRL
--
-14
--
dB
P1dB
--
30
--
W
Gps
--
19
--
dB
--
60
--
%
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
MRF9030R1 MRF9030SR1 3
VGG + C7
B1
B2
VDD + + C16 + C17
C8
C14
C15
L1 RF INPUT
C5 DUT
C9
L2 RF OUTPUT
Z1 C1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12 C13
Z13
C2
C3
C4
C6
C10
C11
C12
B1 B2 C1, C8, C13, C14 C2, C4 C3 C5, C6 C7, C15, C16 C9, C10 C11 C12 C17 L1, L2 Z1 Z2
Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors, B Case 0.8 pF to 8.0 pF Trim Capacitors 3.9 pF Chip Capacitor, B Case 7.5 pF Chip Capacitors, B Case 10 F, 35 V Tantalum Capacitors 10 pF Chip Capacitors, B Case 9.1 pF Chip Capacitor, B Case 0.6 pF to 4.5 pF Trim Capacitor 220 F, 50 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors 0.260 x 0.060 Microstrip 0.240 x 0.060 Microstrip
Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Board
0.500 x 0.100 Microstrip 0.215 x 0.270 Microstrip 0.315 x 0.270 Microstrip 0.160 x 0.270 x 0.520, Taper 0.285 x 0.520 Microstrip 0.140 x 0.270 Microstrip 0.450 x 0.270 Microstrip 0.250 x 0.060 Microstrip 0.720 x 0.060 Microstrip 0.490 x 0.060 Microstrip 0.290 x 0.060 Microstrip Taconic RF-35-0300, (r = 3.5) CAX1/CAX1
Figure 1. 945 MHz Broadband Test Circuit Schematic
C7 VDD C8 C9 L1 RF INPUT C1 C2 C3 C5 C4 C6 C10 C14 L2 C15 C16
C17
VGG
C13 CUT OUT AREA C11 C12
RF OUTPUT
MRF9030 900 MHz Rev-02
Figure 2. 945 MHz Broadband Test Circuit Component Layout
MRF9030R1 MRF9030SR1 4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 12 930 935 940 945 950 955 IMD IRL Gps VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two-Tone, 100 kHz Tone Spacing 50 45 40 35 -30 -32 -34 -36 -38 960
-10 -12 -14 -16 -18
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
20 19.5 G ps , POWER GAIN (dB) 19 18.5 18 17.5 17 IDQ = 375 mA 300 mA 250 mA 200 mA
IMD, INTERMODULATION DISTORTION (dBc)
-20
VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz
-30 IDQ = 200 mA -40 300 mA -50 375 mA 250 mA
VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
-60
1
IRL, INPUT RETURN LOSS (dB)
10 Pout, OUTPUT POWER (WATTS) PEP
100
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
0 -10 -20 -30 -40 -50 -60 -70 3rd Order VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz G ps , POWER GAIN (dB)
22 20 18 16 14 12 10 0.1 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz
60 50 40 30 20 10 0 , DRAIN EFFICIENCY (%)
Gps
5th Order 7th Order 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Intermodulation Distortion Products versus Output Power
Figure 7. Power Gain and Efficiency versus Output Power
MOTOROLA RF DEVICE DATA
MRF9030R1 MRF9030SR1 5
Gps 18 G ps , POWER GAIN (dB) 16 14 12 10 8 IMD 40 20 0 -20 -40 -60
VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz
1
10 Pout, OUTPUT POWER (WATTS) PEP
100
Figure 8. Power Gain, Efficiency and IMD versus Output Power
MRF9030R1 MRF9030SR1 6
, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc)
20
60
MOTOROLA RF DEVICE DATA
Zo = 5 Zin f = 930 MHz ZOL* f = 930 MHz f = 960 MHz f = 960 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 W PEP f MHz 930 945 960 Zin Zin 1.34 - j0.1 1.36 - j0.2 1.4 - j0.14 ZOL* 3.175 + j0.09 3.1 + j0.08 3.0 + j0.05
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion.
Input Matching Network
Device Under Test
Output Matching Network
Z
in
Z
* OL
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF9030R1 MRF9030SR1 7
NOTES
MRF9030R1 MRF9030SR1 8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF9030R1 MRF9030SR1 9
NOTES
MRF9030R1 MRF9030SR1 10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
2X
B
G
1
Q aaa
M
TA
M
B
M
3
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF
B
(FLANGE) 2X
2
D bbb M T A
2X M
K R
(LID)
B
M
ccc N
(LID)
M
TA
M
B
M
ccc
M
TA C
M
B
M
H
F
E
S
(INSULATOR)
T M
(INSULATOR)
SEATING PLANE
aaa TA
M
M
TA
M
B
M
DIM A B C D E F G H K M N Q R S aaa bbb ccc
bbb
M
B
M
A
A
CASE 360B-05 ISSUE F NI-360 MRF9030R1
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
A B
A
(FLANGE)
1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY.
B
(FLANGE) 2X
2 2X
K
M
D
M
bbb
TA
M
B
R
(LID)
ccc N
(LID)
M
TA
M
B F
M
ccc E
M
TA
M
B
M
H
C PIN 3 bbb
M SEATING PLANE M
S
(INSULATOR)
M
(INSULATOR)
T
M
aaa
M
TA
M
B
M
DIM A B C D E F H K M N R S aaa bbb ccc
INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF
MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF
TA
B
CASE 360C-05 ISSUE D NI-360S MRF9030SR1
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
MOTOROLA RF DEVICE DATA
MRF9030R1 MRF9030SR1 11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/
MRF9030R1 MRF9030SR1 12
MRF9030/D MOTOROLA RF DEVICE DATA

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